Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-3600C16-8GTRS 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

G Skill Intl F4-3600C16-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 42

左右 -83% 更低的延时
更快的读取速度，GB/s

20.3 9.7

测试中的平均数值
更快的写入速度，GB/s

18.1 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3600C16-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 23
读取速度，GB/s

9.7 20.3
写入速度，GB/s

6.0 18.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 4173

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMK64GX4M82800C14 8GB

Corsair CMK64GX4M82800C14 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3600C19-16GSXWB 16GB

G Skill Intl F4-3600C19-16GSXWB 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Panram International Corporation D4N2666PS-16G 16GB

Panram International Corporation D4N2666PS-16G 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB