RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
42
左右 -62% 更低的延时
更快的读取速度,GB/s
18.9
9.7
测试中的平均数值
更快的写入速度,GB/s
16.6
6.0
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
26
读取速度,GB/s
9.7
18.9
写入速度,GB/s
6.0
16.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1396
3866
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Kingston 99U5595-005.A00LF 2GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Apacer Technology 78.CAGR9.40C0B 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston HP37D4U1S8ME-16XR 16GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Avant Technology F6451U64F9333G 4GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information TS2GSH64V4B 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX2133C14D4/4G 4GB
报告一个错误
×
Bug description
Source link