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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Golden Empire CL16-16-16 D4-2800 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Golden Empire CL16-16-16 D4-2800 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Golden Empire CL16-16-16 D4-2800 8GB 需要考虑的原因
Golden Empire CL16-16-16 D4-2800 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 42
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Golden Empire CL16-16-16 D4-2800 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 25
  • 读取速度，GB/s
    9.7 left arrow 15.1
  • 写入速度，GB/s
    6.0 left arrow 11.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2914

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Golden Empire CL16-16-16 D4-2800 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston HP37D4U1S8ME-8X 8GB
Kingston HP37D4U1S8ME-8X 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
Corsair CM4X16GE2933C19S2 16MB
Corsair CM4X16GE2933C19S2 16MB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Corsair CM4X16GE2400C14K4 16GB
Corsair CM4X16GE2400C14K4 16GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
Kingston 99U5428-046.A00LF 4GB
G Skill Intl F4-3000C15-4GRK 4GB
G Skill Intl F4-3000C15-4GRK 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3600C16-32GVK 32GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA451R7AFR8N-TF 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston 9905700-024.A00G 8GB
Kingston 9905700-024.A00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3800C14-16GTZN 16GB
G Skill Intl F4-3800C14-16GTZN 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM