Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

报告一个错误

低于PassMark测试中的延时，ns

24 42

左右 -75% 更低的延时
更快的读取速度，GB/s

16.9 9.7

测试中的平均数值
更快的写入速度，GB/s

8.9 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 24
读取速度，GB/s

9.7 16.9
写入速度，GB/s

6.0 8.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 2821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Kingston MSI24D4S7D8MB-16 16GB

Kingston MSI24D4S7D8MB-16 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Kingston 99U5713-001.A00G 4GB

Kingston 99U5713-001.A00G 4GB

Transcend Information JM800QLU-2G 2GB

Transcend Information JM800QLU-2G 2GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Corsair CMK64GX4M8X3600C18 8GB

Corsair CMK64GX4M8X3600C18 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMD32GX4M4B2800C14 8GB

Corsair CMD32GX4M4B2800C14 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston CBD26D4S9S8ME-8 8GB

Kingston CBD26D4S9S8ME-8 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMH32GX4M2D3600C18 16GB

Corsair CMH32GX4M2D3600C18 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB