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Nanya Technology NT4GC64B8HG0NS-CG 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs InnoDisk Corporation M4S0-AGS1O5IK 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
InnoDisk Corporation M4S0-AGS1O5IK 16GB 需要考虑的原因
InnoDisk Corporation M4S0-AGS1O5IK 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.1 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 42
  • 读取速度，GB/s
    9.7 left arrow 13.1
  • 写入速度，GB/s
    6.0 left arrow 11.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2525

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
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Kingston 9905624-019.A00G 8GB
Kingston 9905624-019.A00G 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMK16GX4M4B3333C16 4GB
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内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
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内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
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内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMR32GX4M4A2666C16 8GB
Corsair CMR32GX4M4A2666C16 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Avant Technology W642GU42J5213N8 16GB
Avant Technology W642GU42J5213N8 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
G Skill Intl F4-3800C14-16GTZN 16GB
G Skill Intl F4-3800C14-16GTZN 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Kingston 9905734-082.A00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM