RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KF3600C16D4/16GX 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Kingston KF3600C16D4/16GX 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Kingston KF3600C16D4/16GX 16GB

Kingston KF3600C16D4/16GX 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Kingston KF3600C16D4/16GX 16GB 需要考虑的原因
Kingston KF3600C16D4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 42
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KF3600C16D4/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 25
  • 读取速度，GB/s
    9.7 left arrow 19.3
  • 写入速度，GB/s
    6.0 left arrow 15.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 3751

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Kingston KF3600C16D4/16GX 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-4GRR 4GB
G Skill Intl F4-2133C15-4GRR 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMSX32GX4M2A2933C19 16GB
Corsair CMSX32GX4M2A2933C19 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43DB1-CVF 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
内存RAM
Kingston KF3200C16D4/16GX 16GB
Kingston KF3200C16D4/16GX 16GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
内存RAM