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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Nanya Technology M471A5143EB1-CRC 4GB

总分
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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 79
    左右 47% 更低的延时
Nanya Technology M471A5143EB1-CRC 4GB 需要考虑的原因
Nanya Technology M471A5143EB1-CRC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.9 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology M471A5143EB1-CRC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 79
  • 读取速度，GB/s
    9.7 left arrow 14.7
  • 写入速度，GB/s
    6.0 left arrow 7.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 1710

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Nanya Technology M471A5143EB1-CRC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9905471-002.A00LF 2GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
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内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
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Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
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SpecTek Incorporated ?????????????????? 2GB
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内存RAM
Samsung M471A5244CB0-CWE 4GB
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Kingston KHX3733C19D4/8GX 8GB
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Hewlett-Packard 7EH67AA# 8GB
Hewlett-Packard 7EH67AA# 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
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Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM
Crucial Technology BLS4G3D1609DS1S00 4GB
Crucial Technology BLS4G3D1609DS1S00 4GB
Micron Technology 16JTF51264AZ-1G6K1 4GB
Micron Technology 16JTF51264AZ-1G6K1 4GB
内存RAM
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Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM