Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Samsung M471A1K43CB1-CRCR 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Samsung M471A1K43CB1-CRCR 8GB

需要考虑的原因
Samsung M471A1K43CB1-CRCR 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 42

左右 -83% 更低的延时
更快的读取速度，GB/s

14.7 9.7

测试中的平均数值
更快的写入速度，GB/s

6.9 6.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M471A1K43CB1-CRCR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 23
读取速度，GB/s

9.7 14.7
写入速度，GB/s

6.0 6.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 2231

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMK16GX4M2C3333C16 8GB

Corsair CMK16GX4M2C3333C16 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMWX8GD3200C16W2E 8GB

Corsair CMWX8GD3200C16W2E 8GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Samsung M393A8K40B21-CTC 64GB

Samsung M393A8K40B21-CTC 64GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

V-Color Technology Inc. TL48G30S816KRGB 8GB

V-Color Technology Inc. TL48G30S816KRGB 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

SK Hynix HMT451U6BFR8A-PB 4GB

SK Hynix HMT451U6BFR8A-PB 4GB

Corsair CMSO16GX4M2A2133C15 8GB

Corsair CMSO16GX4M2A2133C15 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

V-Color Technology Inc. TA48G36S818BNK 8GB

V-Color Technology Inc. TA48G36S818BNK 8GB

Kingston 99U5403-002.A00G 2GB

Kingston 99U5403-002.A00G 2GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB