Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Smart Modular SF4641G8CKHI6DFSDS 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Smart Modular SF4641G8CKHI6DFSDS 8GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Smart Modular SF4641G8CKHI6DFSDS 8GB

需要考虑的原因
Smart Modular SF4641G8CKHI6DFSDS 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 42

左右 -20% 更低的延时
更快的读取速度，GB/s

15.2 9.7

测试中的平均数值
更快的写入速度，GB/s

11.7 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 35
读取速度，GB/s

9.7 15.2
写入速度，GB/s

6.0 11.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 2642

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2953EZ3-CE6 1GB

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G Skill Intl F5-6400J3239G16G 16GB

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Corsair CM4X16GE2400C16K4 16GB

Avant Technology F6451U64F9333G 4GB

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Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

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Elpida EBJ81UG8BBU5-GN-F 8GB

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Crucial Technology BL16G36C16U4B.M16FE1 16GB

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Gloway International (HK) STK2133C15-8GB 8GB