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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Super Talent F24EB8GS 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Super Talent F24EB8GS 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Super Talent F24EB8GS 8GB 需要考虑的原因
Super Talent F24EB8GS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 42
    左右 -35% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Super Talent F24EB8GS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 31
  • 读取速度，GB/s
    9.7 left arrow 16.2
  • 写入速度，GB/s
    6.0 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 13 14 15 16 17
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 3017

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Super Talent F24EB8GS 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston K1N7HK-ELC 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Super Talent F24EB8GS 8GB
Super Talent F24EB8GS 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Team Group Inc. Vulcan-1600 4GB
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
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Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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AMD R7S48G2400U2S 8GB
内存RAM
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Crucial Technology BL8G36C16U4B.M8FE1 8GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Corsair CML8GX3M2A1600C9 4GB
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内存RAM
Kingston KHX2133C11D3/4GX 4GB
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内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
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内存RAM
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Kingston 9905403-437.A01LF 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM