Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 -50% 更低的延时
更快的读取速度，GB/s

15.3 9.7

测试中的平均数值
更快的写入速度，GB/s

9.8 6.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 28
读取速度，GB/s

9.7 15.3
写入速度，GB/s

6.0 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 2658

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Micron Technology AFLD48EH1P 8GB

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Crucial Technology CT8G4SFRA266.C4FE 8GB

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Samsung M393B1G70BH0-CK0 8GB

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SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Ramaxel Technology RMR5030ME68F9F1600 4GB

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Samsung M471A2K43DB1-CWE 16GB

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Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB