RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Nanya Technology NT4GC64B8HD0NS-CG 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HD0NS-CG 4GB

Nanya Technology NT4GC64B8HD0NS-CG 4GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-DI 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Nanya Technology NT4GC64B8HD0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HD0NS-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 45
    左右 -50% 更低的延时

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    45 left arrow 30
  • 读取速度，GB/s
    13.0 left arrow 11.7
  • 写入速度，GB/s
    9.0 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2079 left arrow 1927

Nanya Technology NT4GC64B8HG0NS-DI 4GB RAM的比较

SK Hynix HMA42GR7AFR4N-TF 16GB
Crucial Technology BL8G32C16S4B.8FE 8GB

Nanya Technology NT4GC64B8HD0NS-CG 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-DI 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston XJV223-MIE-NX 16GB
Kingston XJV223-MIE-NX 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Hypertec G2RT-4AFT00 16GB
Hypertec G2RT-4AFT00 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-3200C16-8GVKB 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3466C18-8GSXW 8GB
G Skill Intl F4-3466C18-8GSXW 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMW64GX4M4A2666C16 16GB
Corsair CMW64GX4M4A2666C16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Asgard VMA45UG-MEC1U2BQ2 8GB
Asgard VMA45UG-MEC1U2BQ2 8GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
G Skill Intl F4-2133C15-4GRS 4GB
G Skill Intl F4-2133C15-4GRS 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Apacer Technology 78.D1GMM.AU10B 16GB
Apacer Technology 78.D1GMM.AU10B 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-4000C18-8GVK 8GB
G Skill Intl F4-4000C18-8GVK 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMT128GX4M8X3600C18 16GB
Corsair CMT128GX4M8X3600C18 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CM4X8GD3000C15K4 8GB
Corsair CM4X8GD3000C15K4 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3600C18-8GVK 8GB
G Skill Intl F4-3600C18-8GVK 8GB
内存RAM