Nanya Technology NT4GC64C88B1NS-DI 4GB vs Crucial Technology CT8G4DFS824A.M8FR 8GB

总分

Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

总分

Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

差异规格评论

差异

Nanya Technology NT4GC64C88B1NS-DI 4GB

需要考虑的原因
Nanya Technology NT4GC64C88B1NS-DI 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 32

左右 13% 更低的延时

Crucial Technology CT8G4DFS824A.M8FR 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FR 8GB

报告一个错误

更快的读取速度，GB/s

15.6 12.8

测试中的平均数值
更快的写入速度，GB/s

13.1 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64C88B1NS-DI 4GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 32
读取速度，GB/s

12.8 15.6
写入速度，GB/s

8.4 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2226 2949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingston 8ATF1G64AZ-2G3A141 8GB

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AMD R5316G1609U2K 8GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB