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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Avant Technology W642GU42J5213N 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Avant Technology W642GU42J5213N 16GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
Avant Technology W642GU42J5213N 16GB 需要考虑的原因
Avant Technology W642GU42J5213N 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 42
    左右 -83% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Avant Technology W642GU42J5213N 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 23
  • 读取速度，GB/s
    10.6 left arrow 18.3
  • 写入速度，GB/s
    7.8 left arrow 13.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 3152

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Avant Technology W642GU42J5213N 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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PNY Electronics PNY 2GB
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Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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内存RAM
G Skill Intl F5-6400J3239G16G 16GB
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Samsung SH5724G4UNC26P2-SC 32GB
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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
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内存RAM
Kingston 99P5471-002.AOOLF 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M393B1K70CH0-YH9 8GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
内存RAM