Nanya Technology NT4GC72B4NA1NL-CG 4GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Chun Well Technology Holding Limited MD4U1632160DCW 16GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U1632160DCW 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 42

左右 -31% 更低的延时
更快的读取速度，GB/s

16.8 10.6

测试中的平均数值
更快的写入速度，GB/s

15.4 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 32
读取速度，GB/s

10.6 16.8
写入速度，GB/s

7.8 15.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2150 3579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Wilk Elektronik S.A. GY2400D464L15/8G 8GB

Wilk Elektronik S.A. GY2400D464L15/8G 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M378A2G43MX3-CTD 16GB

Samsung M378A2G43MX3-CTD 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMK16GX4M2B3600C18 8GB

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

Corsair CMW16GX4M2D3600C16 8GB

Corsair CMW16GX4M2D3600C16 8GB