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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMWX16GC3200C16W2E 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Corsair CMWX16GC3200C16W2E 16GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Corsair CMWX16GC3200C16W2E 16GB

Corsair CMWX16GC3200C16W2E 16GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
Corsair CMWX16GC3200C16W2E 16GB 需要考虑的原因
Corsair CMWX16GC3200C16W2E 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 42
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMWX16GC3200C16W2E 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 28
  • 读取速度，GB/s
    10.6 left arrow 17.6
  • 写入速度，GB/s
    7.8 left arrow 15.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 3705

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Corsair CMWX16GC3200C16W2E 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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