Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-2400C15-16GFT 16GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

G Skill Intl F4-2400C15-16GFT 16GB

需要考虑的原因
G Skill Intl F4-2400C15-16GFT 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 42

左右 -24% 更低的延时
更快的读取速度，GB/s

16.4 10.6

测试中的平均数值
更快的写入速度，GB/s

13.0 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-2400C15-16GFT 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 34
读取速度，GB/s

10.6 16.4
写入速度，GB/s

7.8 13.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 3123

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 9DNPBNZB-TATP 4GB

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G Skill Intl F4-3600C16-8GTRG 8GB

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Kingston 9965596-035.B00G 4GB

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Samsung M393B5170FH0-CK0 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9905316-106.A02LF 1GB

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Kingston LV26D4S9S8HJ-8 8GB