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Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-8GTZB 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-3200C16-8GTZB 8GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
G Skill Intl F4-3200C16-8GTZB 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GTZB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 42
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 30
  • 读取速度，GB/s
    10.6 left arrow 18.0
  • 写入速度，GB/s
    7.8 left arrow 14.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 3373

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

G Skill Intl F4-3200C16-8GTZB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 9905712-009.A00G 16GB
Kingston 9905712-009.A00G 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M474A2K43BB1-CPB 16GB
Samsung M474A2K43BB1-CPB 16GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston ACR26D4U9D8MH-16 16GB
Kingston ACR26D4U9D8MH-16 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3600C19-16GSXWB 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43DB1-CVF 16GB
内存RAM