Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-4000C18-16GTRS 16GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

G Skill Intl F4-4000C18-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 42

左右 -45% 更低的延时
更快的读取速度，GB/s

20.8 10.6

测试中的平均数值
更快的写入速度，GB/s

16.9 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-4000C18-16GTRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 29
读取速度，GB/s

10.6 20.8
写入速度，GB/s

7.8 16.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2150 3901

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2B3333C16 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Kingston 9905701-132.A00G 16GB

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Samsung M393B1G70QH0-YK0 8GB

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G Skill Intl F4-3200C14-16GFX 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMD64GX4M4B3333C16 16GB

Corsair CMD64GX4M4B3333C16 16GB

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Samsung M393B2G70AH0-YH9 16GB

Samsung M393B2G70AH0-YH9 16GB

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ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston 9905599-029.A00G 4GB

Kingston 9905599-029.A00G 4GB

Kingston 99U5403-465.A00LF 8GB

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G Skill Intl F4-3200C15-8GTZKW 8GB

G Skill Intl F4-3200C15-8GTZKW 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology 36ASF4G72PZ-2G3B1 32GB