Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-4200C19-4GTZ 4GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 75

左右 44% 更低的延时
更快的写入速度，GB/s

7.8 7.6

测试中的平均数值

G Skill Intl F4-4200C19-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-4200C19-4GTZ 4GB

报告一个错误

更快的读取速度，GB/s

14.5 10.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 75
读取速度，GB/s

10.6 14.5
写入速度，GB/s

7.8 7.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2150 1735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BA1339.C16F 4GB

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A4K40BB1-CRC 32GB

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Crucial Technology BLS4G4D240FSB.8FADG 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB