Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Kingston HP26D4U9S8ME-8 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Kingston HP26D4U9S8ME-8 8GB

Kingston HP26D4U9S8ME-8 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Kingston HP26D4U9S8ME-8 8GB

需要考虑的原因
Kingston HP26D4U9S8ME-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 42

左右 -31% 更低的延时
更快的读取速度，GB/s

15 10.6

测试中的平均数值
更快的写入速度，GB/s

9.9 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston HP26D4U9S8ME-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 32
读取速度，GB/s

10.6 15.0
写入速度，GB/s

7.8 9.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2150 2524

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G48C40U5.M8A1 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Corsair CMD64GX4M4A2400C14 16GB

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Samsung M471B1G73DB0-YK0 8GB

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Kingston HX421C14FB/4 4GB

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Samsung M395T2863QZ4-CF76 1GB

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Kingston HP669238-071-HYC 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

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Crucial Technology BL16G32C16U4R.16FE 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2133C15-8GVR 8GB

G Skill Intl F4-2133C15-8GVR 8GB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB