Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Kllisre D4 8G 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 47

左右 11% 更低的延时
更快的写入速度，GB/s

7.8 6.7

测试中的平均数值

Kllisre D4 8G 8GB

需要考虑的原因
Kllisre D4 8G 8GB

报告一个错误

更快的读取速度，GB/s

11.7 10.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kllisre D4 8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 47
读取速度，GB/s

10.6 11.7
写入速度，GB/s

7.8 6.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 2143

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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SpecTek Incorporated ?????????????????? 2GB

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Crucial Technology CT16G4DFD8213.C16FBR 16GB

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Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston ACR32D4U2S8HD-8X 8GB

Kingston ACR32D4U2S8HD-8X 8GB

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SK Hynix V-GeN D4H4GL30A8TX5 4GB