Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Micron Technology 9905625-004.A03LF 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Micron Technology 9905625-004.A03LF 8GB

需要考虑的原因
Micron Technology 9905625-004.A03LF 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 -62% 更低的延时
更快的读取速度，GB/s

17.4 10.6

测试中的平均数值
更快的写入速度，GB/s

11.7 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 9905625-004.A03LF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 26
读取速度，GB/s

10.6 17.4
写入速度，GB/s

7.8 11.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 2806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C16-8GRK 8GB

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Kingston KHX3200C18D4/8G 8GB

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Corsair CMK32GX4M4B3866C18 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Kingston ACR16D3LS1KNG/4G 4GB

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Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

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AMD AE34G1601U1 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

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G Skill Intl F4-4000C18-8GTZR 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

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Kingston 99P5474-014.A00LF 4GB

Corsair CMU16GX4M2C3000C15 8GB

Corsair CMU16GX4M2C3000C15 8GB