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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Ramaxel Technology RMSA3270MB76H8F2400 2GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 96
    左右 56% 更低的延时
  • 更快的读取速度，GB/s
    10.6 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 5.9
    测试中的平均数值
Ramaxel Technology RMSA3270MB76H8F2400 2GB 需要考虑的原因
Ramaxel Technology RMSA3270MB76H8F2400 2GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 96
  • 读取速度，GB/s
    10.6 left arrow 10.5
  • 写入速度，GB/s
    7.8 left arrow 5.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 1211

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Apacer Technology 78.D2GG7.AU30B 16GB
Apacer Technology 78.D2GG7.AU30B 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Corsair CMU32GX4M2A2666C16 16GB
Corsair CMU32GX4M2A2666C16 16GB
内存RAM
Unifosa Corporation GU502203EP0201 1GB
Unifosa Corporation GU502203EP0201 1GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMK16GX4M4A2666C15 4GB
Corsair CMK16GX4M4A2666C15 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMT64GX4M4C3466C16 16GB
Corsair CMT64GX4M4C3466C16 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Samsung M471A2K43CB1-CTCT 16GB
Samsung M471A2K43CB1-CTCT 16GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
G Skill Intl F4-3600C19-8GVSB 8GB
G Skill Intl F4-3600C19-8GVSB 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Avant Technology J642GU44J2320ND 16GB
Avant Technology J642GU44J2320ND 16GB
内存RAM