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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M386B4G70DM0-CMA4 32GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 52
    左右 19% 更低的延时
  • 更快的读取速度，GB/s
    10.6 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 7.2
    测试中的平均数值
Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
  • 更高的内存带宽，mbps
    14900 left arrow 10600
    左右 1.41 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M386B4G70DM0-CMA4 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    42 left arrow 52
  • 读取速度，GB/s
    10.6 left arrow 9.7
  • 写入速度，GB/s
    7.8 left arrow 7.2
  • 内存带宽，mbps
    10600 left arrow 14900
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-10-9-28 / 1866 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 2173

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 99U5458-008.A00LF 4GB
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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
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Golden Empire CL14-16-16 D4-2400 16GB
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Corsair CM3B4G2C1600L9 4GB
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Ramaxel Technology RMSA3270ME86H9F-2666 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
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内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
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Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905625-076.A00G 8GB
内存RAM
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Crucial Technology BL16G30C15U4B.M16FE1 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
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SK Hynix HMA82GR7AFR8N-UH 16GB
SK Hynix HMA82GR7AFR8N-UH 16GB
内存RAM
Kingston KF552C40-16 16GB
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内存RAM
Kingston 9905471-002.A00LF 2GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMK16GX4M2B3000C15 8GB
内存RAM