Nanya Technology NT4GC72B4NA1NL-CG 4GB vs SK Hynix HMA82GR8AMR4N-TF 16GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

更快的读取速度，GB/s

10.6 10.4

测试中的平均数值

SK Hynix HMA82GR8AMR4N-TF 16GB

需要考虑的原因
SK Hynix HMA82GR8AMR4N-TF 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 42

左右 -14% 更低的延时
更快的写入速度，GB/s

7.9 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA82GR8AMR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 37
读取速度，GB/s

10.6 10.4
写入速度，GB/s

7.8 7.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2150 2230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR4 2800 2OZ 4GB

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Apacer Technology 78.CAGPW.40C0B 8GB

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Kingston 99U5584-004.A00LF 4GB

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Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB