Nanya Technology NT512T64UH8B0FN-3C 512MB vs Crucial Technology BLS8G4S26BFSDK.8FD 8GB

总分

Nanya Technology NT512T64UH8B0FN-3C 512MB

Nanya Technology NT512T64UH8B0FN-3C 512MB

总分

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

差异规格评论

差异

Nanya Technology NT512T64UH8B0FN-3C 512MB

需要考虑的原因
Nanya Technology NT512T64UH8B0FN-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 11.7

测试中的平均数值

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 72

左右 -76% 更低的延时
更快的写入速度，GB/s

9.5 1,323.5

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64UH8B0FN-3C 512MB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 41
读取速度，GB/s

2,616.5 11.7
写入速度，GB/s

1,323.5 9.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

329 2058

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT512T64UH8B0FN-3C 512MB

Nanya Technology NT512T64UH8B0FN-3C 512MB

Crucial Technology CT16G4DFD8266.C16FE 16GB

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Nanya Technology NT512T64UH8B0FN-3C 512MB

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Transcend Information AQD-SD4U8GE21-SG 8GB

Transcend Information AQD-SD4U8GE21-SG 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB