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Nanya Technology NT512T64UH8B0FN-3C 512MB
Kingston 9905701-131.A00G 16GB

Nanya Technology NT512T64UH8B0FN-3C 512MB vs Kingston 9905701-131.A00G 16GB

总分
star star star star star
Nanya Technology NT512T64UH8B0FN-3C 512MB

Nanya Technology NT512T64UH8B0FN-3C 512MB

总分
star star star star star
Kingston 9905701-131.A00G 16GB

Kingston 9905701-131.A00G 16GB

差异 规格 评论

差异

Nanya Technology NT512T64UH8B0FN-3C 512MB 需要考虑的原因
Nanya Technology NT512T64UH8B0FN-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.3
    测试中的平均数值
Kingston 9905701-131.A00G 16GB 需要考虑的原因
Kingston 9905701-131.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 72
    左右 -112% 更低的延时
  • 更快的写入速度，GB/s
    6.9 left arrow 1,323.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64UH8B0FN-3C 512MB
Kingston 9905701-131.A00G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 34
  • 读取速度，GB/s
    2,616.5 left arrow 14.3
  • 写入速度，GB/s
    1,323.5 left arrow 6.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    329 left arrow 2339

Nanya Technology NT512T64UH8B0FN-3C 512MB RAM的比较

Nanya Technology NT1GT64UH8D0FN-AD 1GB
Corsair CM4X8GC3000C15K4 8GB

Kingston 9905701-131.A00G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT512T64UH8B0FN-3C 512MB
Nanya Technology NT512T64UH8B0FN-3C 512MB
Kingston 9905701-131.A00G 16GB
Kingston 9905701-131.A00G 16GB
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Kingston 9965525-010.A00LF 4GB
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Samsung M386A8K40BMB-CPB 64GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3000C15-4GRR 4GB
G Skill Intl F4-3000C15-4GRR 4GB
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Micron Technology 16JTF25664AZ-1G4F1 2GB
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Kingston 9965596-016.B01G 8GB
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Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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Kingston HP26D4S9S8MHF-8 8GB
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Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
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Kingmax Semiconductor GLLF62F-D8---------- 4GB
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Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
内存RAM
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Kingston 9905403-444.A00LF 4GB
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Patriot Memory (PDP Systems) 2666 C16 Series 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Mushkin MRA4S320GJJM16G 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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G Skill Intl F4-3300C16-4GRRD 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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G Skill Intl F4-4000C18-16GVK 16GB
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