Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Crucial Technology BLT4G4D26AFTA.8FADG 4GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

需要考虑的原因
Crucial Technology BLT4G4D26AFTA.8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 35

左右 -52% 更低的延时
更快的读取速度，GB/s

16.5 13.7

测试中的平均数值
更快的写入速度，GB/s

12.6 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 23
读取速度，GB/s

13.7 16.5
写入速度，GB/s

9.6 12.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2312 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMD32GX4M2B3466C16 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Kingston 9905663-006.A00G 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-2400C15-16GFX 16GB

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A-DATA Technology VDQVE1B16 2GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB