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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Crucial Technology CT16G4SFRA266.M8FB 16GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Crucial Technology CT16G4SFRA266.M8FB 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
需要考虑的原因
Crucial Technology CT16G4SFRA266.M8FB 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
35
左右 -13% 更低的延时
更快的读取速度,GB/s
15.2
13.7
测试中的平均数值
更快的写入速度,GB/s
13.2
9.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
31
读取速度,GB/s
13.7
15.2
写入速度,GB/s
9.6
13.2
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2312
3217
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Crucial Technology CT16G4SFRA266.M8FB 16GB RAM的比较
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70CH0-CH9 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4600C18-8GTRS 8GB
Samsung M471B5273DH0-CH9 4GB
Samsung M393A2K43BB1-CPB 16GB
A-DATA Technology DQKD1A08 1GB
Mushkin 99[2/7/4]209F 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Samsung M378B5273CH0-CK0 4GB
Samsung M378B5173BH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation W4U2666P-8G 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF3200C16D4/16GX 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF1G72PZ-2G1AV 8GB
报告一个错误
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Bug description
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