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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Crucial Technology CT8G4DFS8213.C8FBR1 8GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
更快的写入速度,GB/s
9.6
9.0
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
35
左右 -6% 更低的延时
更快的读取速度,GB/s
14.4
13.7
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
33
读取速度,GB/s
13.7
14.4
写入速度,GB/s
9.6
9.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2312
2486
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3000C15-8GTZB 8GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
AMD R538G1601U2S-UO 8GB
Kingston ACR32D4S2S8ME-16 16GB
Samsung M393B5170FH0-CK0 4GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Heoriady M471A1K43BB1-CRC 16GB
Kingston 9905783-025.A01G 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK8GX4M1Z3600C18 8GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-2400C16-4GRS 4GB
Samsung M391B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMK32GX4M4K4000C19 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMD8GX4M2B4000C19 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3333C16-16GTZKW 16GB
报告一个错误
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Bug description
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