RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited KD4AGU88C-26N1900 16GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Essencore Limited KD4AGU88C-26N1900 16GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Essencore Limited KD4AGU88C-26N1900 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
需要考虑的原因
Essencore Limited KD4AGU88C-26N1900 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
35
左右 -13% 更低的延时
更快的读取速度,GB/s
18.2
13.7
测试中的平均数值
更快的写入速度,GB/s
14.6
9.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited KD4AGU88C-26N1900 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
31
读取速度,GB/s
13.7
18.2
写入速度,GB/s
9.6
14.6
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2312
3115
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Essencore Limited KD4AGU88C-26N1900 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905469-124.A00LF 4GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9905630-005.A00G 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3400C16-16GVR 16GB
Kingston ACR16D3LS1KNG/4G 4GB
Corsair CMH32GX4M2E3200C16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited KD4AGU88C-26N1900 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK64GX4M4X4000C18 16GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Smart Modular SF464128CKHI6DFSEG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C14-16GVK 16GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3600C14-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9905744-011.A00G 32GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
报告一个错误
×
Bug description
Source link