Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3333C16-16GTZR 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

G Skill Intl F4-3333C16-16GTZR 16GB

G Skill Intl F4-3333C16-16GTZR 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

G Skill Intl F4-3333C16-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 -25% 更低的延时
更快的读取速度，GB/s

19 13.7

测试中的平均数值
更快的写入速度，GB/s

14.2 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3333C16-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 28
读取速度，GB/s

13.7 19.0
写入速度，GB/s

9.6 14.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 3651

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G48C40U5.M4A1 8GB

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UMAX Technology D4-3200-16G-1024X8-L 16GB

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G Skill Intl F4-3600C16-16GTRSC 16GB

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Corsair CMD8GX3M2A2800C12 4GB

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Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

A-DATA Technology DDR3 1600 4GB

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G Skill Intl F4-3866C18-8GTZ 8GB

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Kingston KHX1600C9D3/8G 8GB

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Corsair CMK64GX4M2E3200C16 32GB