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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL14-14-14 D4-2400 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Golden Empire CL14-14-14 D4-2400 16GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Golden Empire CL14-14-14 D4-2400 16GB 需要考虑的原因
Golden Empire CL14-14-14 D4-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 35
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL14-14-14 D4-2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 24
  • 读取速度，GB/s
    13.7 left arrow 16.8
  • 写入速度，GB/s
    9.6 left arrow 11.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3092

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Golden Empire CL14-14-14 D4-2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL14-14-14 D4-2400 16GB
Golden Empire CL14-14-14 D4-2400 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Asgard VML41UG-MIC1U22T1 8GB
Asgard VML41UG-MIC1U22T1 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
Elpida EBE10UE8AFSA-8G-F 1GB
Elpida EBE10UE8AFSA-8G-F 1GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CM4X4GF2400Z16K4 4GB
Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9965596-023.B01G 8GB
Kingston 9965596-023.B01G 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Avant Technology J644GU44J9266NF 32GB
Avant Technology J644GU44J9266NF 32GB
内存RAM
SK Hynix HMA41GS6AFR8N-TF 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
Kingston 9905668-002.A00G 8GB
Kingston 9905668-002.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Apacer Technology GD2.1527WE.001 8GB
Apacer Technology GD2.1527WE.001 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9905704-007.A00G 4GB
Kingston 9905704-007.A00G 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston KDK8NX-MIE 16GB
Kingston KDK8NX-MIE 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
内存RAM