Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Kingston ACR26D4U9D8MH-16 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Kingston ACR26D4U9D8MH-16 16GB

Kingston ACR26D4U9D8MH-16 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

更快的写入速度，GB/s

9.6 9.2

测试中的平均数值

Kingston ACR26D4U9D8MH-16 16GB

需要考虑的原因
Kingston ACR26D4U9D8MH-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 -40% 更低的延时
更快的读取速度，GB/s

16.3 13.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston ACR26D4U9D8MH-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 25
读取速度，GB/s

13.7 16.3
写入速度，GB/s

9.6 9.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 2614

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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AMD R5S38G1601U2S 8GB

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Samsung M393A4K40CB1-CRC 32GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Micron Technology 18ASF1G72PZ-2G1B1 8GB

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA451U7MFR8N-TF 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Crucial Technology BLE4G4D32AEEA.K8FD 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

Kingston 99U5471-037.A00LF 8GB

Kingston 99U5471-037.A00LF 8GB

Corsair MK16GX44B3000C15 4GB

Corsair MK16GX44B3000C15 4GB

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Kingston 9965525-155.A00LF 8GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB