RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston MSI24D4S7D8MHMH6 16GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Kingston MSI24D4S7D8MHMH6 16GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Kingston MSI24D4S7D8MHMH6 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
更快的写入速度,GB/s
9.6
7.1
测试中的平均数值
需要考虑的原因
Kingston MSI24D4S7D8MHMH6 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
35
左右 -35% 更低的延时
更快的读取速度,GB/s
13.9
13.7
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston MSI24D4S7D8MHMH6 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
26
读取速度,GB/s
13.7
13.9
写入速度,GB/s
9.6
7.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2312
2192
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Kingston MSI24D4S7D8MHMH6 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Kingston KMKYF9-MID 8GB
Kingston KF2666C15S4/8G 8GB
Kingston 99U5428-018.A00LF 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
Samsung M393B2G70BH0-YK0 16GB
Apacer Technology 76.D305G.D060B 16GB
Samsung M378B5673FH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMK16GX4M2Z4000C18 8GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4SFS824A.M8FB 4GB
报告一个错误
×
Bug description
Source link