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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation PUD42133C138G4NJK 8GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Panram International Corporation PUD42133C138G4NJK 8GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Panram International Corporation PUD42133C138G4NJK 8GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
74
左右 53% 更低的延时
更快的写入速度,GB/s
9.6
9.0
测试中的平均数值
需要考虑的原因
Panram International Corporation PUD42133C138G4NJK 8GB
报告一个错误
更快的读取速度,GB/s
14.9
13.7
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation PUD42133C138G4NJK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
74
读取速度,GB/s
13.7
14.9
写入速度,GB/s
9.6
9.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2312
1925
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Panram International Corporation PUD42133C138G4NJK 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK32GX4M4A2666C16 8GB
Samsung M471A2K43CB1-CTD 16GB
Crucial Technology CB16GS2666.C8ET 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation PUD42133C138G4NJK 8GB
Kingston ACR16D3LS1NGG/4G 4GB
Kingston 9905678-139.A00G 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Golden Empire CL15-17-17 D4-3200 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3600C16-8GTZSW 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston 9905625-074.A00G 16GB
AMD R538G1601U2S 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Kingston 99U5584-007.A00LF 4GB
Samsung M471A1K43CB1-CRCR 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
报告一个错误
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Bug description
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