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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
35
左右 -25% 更低的延时
更快的读取速度,GB/s
17.1
13.7
测试中的平均数值
更快的写入速度,GB/s
15.3
9.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
28
读取速度,GB/s
13.7
17.1
写入速度,GB/s
9.6
15.3
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2312
3480
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B5170FH0-CK0 4GB
Micron Technology 9905625-004.A03LF 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Samsung M395T2863QZ4-CF76 1GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9965640-015.A00G 32GB
TwinMOS 8DHE3MN8-HATP 2GB
Lenovo LMKUFG68AHFHD-32A 16GB
Apacer Technology 78.01G86.9H50C 1GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Kingston KVT8FP-HYC 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK32GX4M4A2666C15 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMT16GX4M2C3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Smart Modular SF4641G8CK8IEHLSBG 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK32GX4M2D3600C16 16GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMK16GX4M1A2400C14 16GB
报告一个错误
×
Bug description
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