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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
V-GEN D4H8GS24A8 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs V-GEN D4H8GS24A8 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 92
    左右 62% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 8.2
    测试中的平均数值
V-GEN D4H8GS24A8 8GB 需要考虑的原因
V-GEN D4H8GS24A8 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.1 left arrow 13.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
V-GEN D4H8GS24A8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 92
  • 读取速度，GB/s
    13.7 left arrow 15.1
  • 写入速度，GB/s
    9.6 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 1640

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

V-GEN D4H8GS24A8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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Micron Technology 18ASF2G72AZ-2G1B1 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Kingston KHX2666C13/8GX 8GB
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内存RAM
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Micron Technology 18HTF12872AY-800F1 1GB
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Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM