Patriot Memory (PDP Systems) PEP22G6400LL 2GB vs Micron Technology 8ATF1G64AZ-3G2E1 8GB

总分

Patriot Memory (PDP Systems) PEP22G6400LL 2GB

Patriot Memory (PDP Systems) PEP22G6400LL 2GB

总分

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PEP22G6400LL 2GB

需要考虑的原因
Patriot Memory (PDP Systems) PEP22G6400LL 2GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值

Micron Technology 8ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 50

左右 -32% 更低的延时
更快的写入速度，GB/s

12.4 1,900.8

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PEP22G6400LL 2GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 38
读取速度，GB/s

4,113.1 14.7
写入速度，GB/s

1,900.8 12.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

814 2908

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PEP22G6400LL 2GB

Patriot Memory (PDP Systems) PEP22G6400LL 2GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

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A-DATA Technology DDR4 3333 2OZ 4GB

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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G Skill Intl F4-3600C18-32GTRS 32GB

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Corsair CMU32GX4M2A2666C16 16GB

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Samsung M378B5173BH0-CH9 4GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB