Patriot Memory (PDP Systems) PSD22G8002 2GB vs SK Hynix HMA82GS6JJR8N-VK 16GB

总分

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

总分

SK Hynix HMA82GS6JJR8N-VK 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD22G8002 2GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB

报告一个错误

更快的读取速度，GB/s

4 15.1

测试中的平均数值
更快的写入速度，GB/s

2,109.3 11.5

测试中的平均数值

SK Hynix HMA82GS6JJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6JJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 60

左右 -67% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMA82GS6JJR8N-VK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 36
读取速度，GB/s

4,162.7 15.1
写入速度，GB/s

2,109.3 11.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

784 2814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology CT102464BA160B.M16 8GB

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G Skill Intl F4-3000C14-16GVKD 16GB

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Kingston KVR16N11/8-SP 8GB

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Corsair CMK16GX4M2L3000C15 8GB

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Kingston KF3200C18D4/8G 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Kingston KHX1600C9D3/8G 8GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology BL16G36C16U4R.M8FB1 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB