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Patriot Memory (PDP Systems) PSD34G16002 4GB
Avant Technology W6451U66J5213ND 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB vs Avant Technology W6451U66J5213ND 4GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分
star star star star star
Avant Technology W6451U66J5213ND 4GB

Avant Technology W6451U66J5213ND 4GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB
报告一个错误
Avant Technology W6451U66J5213ND 4GB 需要考虑的原因
Avant Technology W6451U66J5213ND 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 39
    左右 -26% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avant Technology W6451U66J5213ND 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 31
  • 读取速度，GB/s
    14.7 left arrow 15.6
  • 写入速度，GB/s
    9.2 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2322 left arrow 2316

Patriot Memory (PDP Systems) PSD34G16002 4GB RAM的比较

Transcend Information JM1600KLN-4GK 2GB
Micron Technology ITC 4GB

Avant Technology W6451U66J5213ND 4GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
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Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
内存RAM
Kingston HP26D4S9S1ME-4 4GB
Kingston HP26D4S9S1ME-4 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
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Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
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Kingston 9905701-022.A00G 16GB
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G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
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Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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G Skill Intl F4-4000C19-16GTZSW 16GB
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Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
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Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMK16GX4M4C3000C16 4GB
Corsair CMK16GX4M4C3000C16 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
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Kingston CBD26D4S9D8ME-16 16GB
内存RAM
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Corsair CMV4GX3M1B1600C11 4GB
Corsair CMD32GX4M4B3600C16 8GB
Corsair CMD32GX4M4B3600C16 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CM4S16GL3200K18K2 16GB
Corsair CM4S16GL3200K18K2 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
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