Patriot Memory (PDP Systems) PSD34G16002 4GB vs Avant Technology W6451U67J5213NB 4GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 76

左右 49% 更低的延时
更快的读取速度，GB/s

14.7 14.4

测试中的平均数值
更快的写入速度，GB/s

9.2 7.7

测试中的平均数值

Avant Technology W6451U67J5213NB 4GB

需要考虑的原因
Avant Technology W6451U67J5213NB 4GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Avant Technology W6451U67J5213NB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 76
读取速度，GB/s

14.7 14.4
写入速度，GB/s

9.2 7.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2322 1718

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-10600CL9-2GBNT 2GB

Avant Technology W642GU44J2320NC 16GB

Avant Technology W642GU44J2320NC 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Apacer Technology 78.CAGPP.40C0B 8GB

Apacer Technology 78.CAGPP.40C0B 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston CAC24D4S7D8MB-16 16GB

Kingston CAC24D4S7D8MB-16 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA82GS6CJR8N-UH 16GB

SK Hynix HMA82GS6CJR8N-UH 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

G Skill Intl F4-3200C15-8GTZ 8GB

G Skill Intl F4-3200C15-8GTZ 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB