Patriot Memory (PDP Systems) PSD34G16002 4GB vs Corsair CM4B16G2L2666A18K2 16GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Corsair CM4B16G2L2666A18K2 16GB

Corsair CM4B16G2L2666A18K2 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Corsair CM4B16G2L2666A18K2 16GB

需要考虑的原因
Corsair CM4B16G2L2666A18K2 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 -30% 更低的延时
更快的读取速度，GB/s

17.4 14.7

测试中的平均数值
更快的写入速度，GB/s

14.7 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CM4B16G2L2666A18K2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 30
读取速度，GB/s

14.7 17.4
写入速度，GB/s

9.2 14.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2322 3527

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Micron Technology 9ASF51272PZ-2G3B1 4GB

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Micron Technology HMA81GU6AFR8N-UH 8GB

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Micron Technology 36ASF4G72PZ-2G6D1 32GB

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Corsair CMX4GX3M2A1600C9 2GB

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G Skill Intl F4-3333C16-8GVK 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB