Patriot Memory (PDP Systems) PSD34G16002 4GB vs Corsair CMSX16GX4M2A3000C16 8GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Corsair CMSX16GX4M2A3000C16 8GB

Corsair CMSX16GX4M2A3000C16 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Corsair CMSX16GX4M2A3000C16 8GB

需要考虑的原因
Corsair CMSX16GX4M2A3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 -44% 更低的延时
更快的读取速度，GB/s

16.5 14.7

测试中的平均数值
更快的写入速度，GB/s

13.1 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMSX16GX4M2A3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 27
读取速度，GB/s

14.7 16.5
写入速度，GB/s

9.2 13.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2322 3061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HMT425S6CFR6A-PB 2GB

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Micron Technology 8ATF1G64AZ-2G6B1 8GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB

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Essencore Limited KD48GU88C-26N190A 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

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Crucial Technology CT16G4SFD8266.M16FE 16GB

Samsung M393B2G70AH0-YH9 16GB

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Apacer Technology D12.2324CS.001 8GB

Apacer Technology D12.2324CS.001 8GB