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Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4DFS6266.M4FE 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB vs Crucial Technology CT8G4DFS6266.M4FE 8GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分
star star star star star
Crucial Technology CT8G4DFS6266.M4FE 8GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB
报告一个错误
Crucial Technology CT8G4DFS6266.M4FE 8GB 需要考虑的原因
Crucial Technology CT8G4DFS6266.M4FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 39
    左右 -39% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 28
  • 读取速度，GB/s
    14.7 left arrow 17.3
  • 写入速度，GB/s
    9.2 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2322 left arrow 3325

Patriot Memory (PDP Systems) PSD34G16002 4GB RAM的比较

Transcend Information JM1600KLN-4GK 2GB
Micron Technology ITC 4GB

Crucial Technology CT8G4DFS6266.M4FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Corsair CMD64GX4M8X3800C19 8GB
Corsair CMD64GX4M8X3800C19 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Samsung M378A5143DB0-CPB 4GB
Samsung M378A5143DB0-CPB 4GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Avant Technology J641GU48J5213NG 8GB
Avant Technology J641GU48J5213NG 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 9905625-004.A03LF 8GB
Micron Technology 9905625-004.A03LF 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-2133C15-4GRR 4GB
G Skill Intl F4-2133C15-4GRR 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
AMD R748G2133U2S 8GB
AMD R748G2133U2S 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C18-16GVK 16GB
G Skill Intl F4-4000C18-16GVK 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
内存RAM