Patriot Memory (PDP Systems) PSD34G16002 4GB vs Samsung M378A2K43CB1-CRC 16GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Samsung M378A2K43CB1-CRC 16GB

需要考虑的原因
Samsung M378A2K43CB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 39

左右 -22% 更低的延时
更快的读取速度，GB/s

15.6 14.7

测试中的平均数值
更快的写入速度，GB/s

10.6 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung M378A2K43CB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 32
读取速度，GB/s

14.7 15.6
写入速度，GB/s

9.2 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2322 2900

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-2133C15-8GFXR 8GB

G Skill Intl F4-2133C15-8GFXR 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Samsung M378A5143EB1-CPB 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N