Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs AMD R744G2606U1S 4GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 76

左右 46% 更低的延时
更快的写入速度，GB/s

9.2 8.7

测试中的平均数值

AMD R744G2606U1S 4GB

需要考虑的原因
AMD R744G2606U1S 4GB

报告一个错误

更快的读取速度，GB/s

15.7 14

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

AMD R744G2606U1S 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 76
读取速度，GB/s

14.0 15.7
写入速度，GB/s

9.2 8.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2356 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3466C16-4GVK 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

AMD R744G2606U1S 4GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology BLS4G4D26BFSB.8FE 4GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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A-DATA Technology DDR3 1333G 2GB

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Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB