Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Corsair CMK8GX4M2B4200C19 4GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 44

左右 7% 更低的延时

Corsair CMK8GX4M2B4200C19 4GB

需要考虑的原因
Corsair CMK8GX4M2B4200C19 4GB

报告一个错误

更快的读取速度，GB/s

14.7 14

测试中的平均数值
更快的写入速度，GB/s

10.1 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK8GX4M2B4200C19 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 44
读取速度，GB/s

14.0 14.7
写入速度，GB/s

9.2 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2356 2170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston 8ATF1G64AZ-2G3A1 8GB

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Apacer Technology 78.C2GFL.C720B 8GB

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Samsung M393B5270CH0-CH9 4GB

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Samsung M378B5673EH1-CF8 2GB

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I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-3200C16-16GVKA 16GB

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Crucial Technology CT102464BF160B-16F 8GB

Corsair CMD64GX4M4C3000C15 16GB

Corsair CMD64GX4M4C3000C15 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB