Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Crucial Technology CT8G4SFD8213.M16FB 8GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

Crucial Technology CT8G4SFD8213.M16FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.M16FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更快的读取速度，GB/s

15.5 14

测试中的平均数值
更快的写入速度，GB/s

12.1 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

14.0 15.5
写入速度，GB/s

9.2 12.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2356 2628

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G3S1339M.M16FDD 8GB

Crucial Technology CT8G3S1339M.M16FDD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Corsair CMK16GX4M4A2666C15 4GB

Corsair CMK16GX4M4A2666C15 4GB

Kingston KHX1600C10D3/8G 8GB

Kingston KHX1600C10D3/8G 8GB

Samsung M378B5273DH0-CK0 4GB

Samsung M378B5273DH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3200C14-8GTRG 8GB

G Skill Intl F4-3200C14-8GTRG 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 9965596-036.B00G 8GB

Kingston 9965596-036.B00G 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Corsair CM4X8GE2666C16K8 8GB

Corsair CM4X8GE2666C16K8 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Kingston 9905700-026.A00G 8GB

Kingston 9905700-026.A00G 8GB